The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon

The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Author: David Andrew Woolf
Publisher:
Total Pages:
Release: 1990
Genre:
ISBN:


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The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Language: en
Pages:
Authors: David Andrew Woolf
Categories:
Type: BOOK - Published: 1990 - Publisher:

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The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Language: en
Pages: 432
Authors: David Ian Westwood
Categories:
Type: BOOK - Published: 1990 - Publisher:

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The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates
Language: en
Pages:
Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures
Language: en
Pages: 578
Molecular Beam Epitaxial Growth and Characterization of Indium Antimonide on Gallium Arsenide
Language: en
Pages: 198
Authors: Jen-Inn Chyi
Categories:
Type: BOOK - Published: 1990 - Publisher:

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Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this h