Silicon Carbide and Related Materials 2011

Silicon Carbide and Related Materials 2011
Author: Robert P. Devaty
Publisher: Trans Tech Publications Ltd
Total Pages: 1500
Release: 2012-05-14
Genre: Technology & Engineering
ISBN: 3038138339


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ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA


Silicon Carbide and Related Materials 2011
Language: en
Pages: 1500
Authors: Robert P. Devaty
Categories: Technology & Engineering
Type: BOOK - Published: 2012-05-14 - Publisher: Trans Tech Publications Ltd

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ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16,
Silicon Carbide and Related Materials 2011
Language: en
Pages: 694
Authors:
Categories:
Type: BOOK - Published: 2012 - Publisher:

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Silicon Carbide and Related Materials 2011
Language: en
Pages: 0
Authors: Robert P. Devaty
Categories: Technology & Engineering
Type: BOOK - Published: 2012-05-14 - Publisher: Trans Tech Publications Limited

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ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16,
Silicon Carbide and Related Materials, Proceedings of the Fifth Conference, 1-3 November 1993, Washington DC, USA
Language: en
Pages: 768
Authors: Michael G. Spencer
Categories: Art
Type: BOOK - Published: 1994-06-29 - Publisher: CRC Press

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USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap
Silicon Carbide One-dimensional Nanostructures
Language: en
Pages: 148
Authors: Laurence Latu-Romain
Categories: Technology & Engineering
Type: BOOK - Published: 2015-03-16 - Publisher: John Wiley & Sons

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Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of si