Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth

Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth
Author: William John Mecouch
Publisher:
Total Pages: 239
Release: 2005
Genre:
ISBN:
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Keywords: IVPG, HVPE, bulk growth, Surface science.


Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth
Language: en
Pages: 239

Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth

Authors: William John Mecouch
Categories:
Type: BOOK - Published: 2005 - Publisher:

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Keywords: IVPG, HVPE, bulk growth, Surface science.
Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth
Language: en
Pages:

Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth

Authors:
Categories:
Type: BOOK - Published: 2004 - Publisher:

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The research conducted for this dissertation involved two tasks important to the achievement of (1) increased breakdown fields and improved ohmic and rectifying
Growth Via Low Pressure Metalorganic Vapor PhaseEpitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films
Language: en
Pages:

Growth Via Low Pressure Metalorganic Vapor PhaseEpitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films

Authors:
Categories:
Type: BOOK - Published: 2001 - Publisher:

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he purpose of the research presented herein has been to determine the underlyingmechanisms of and to optimize the growth parameters for the growth of smooth sur
Analysis of the GaN-sapphire Thick Films, Processed by Iodine Vapor Phase Growth by Transmission Electron Microscopy and Atomic Force Microscopy
Language: en
Pages: 186

Analysis of the GaN-sapphire Thick Films, Processed by Iodine Vapor Phase Growth by Transmission Electron Microscopy and Atomic Force Microscopy

Authors: Praveena M. Bhaskara
Categories: Atomic force microscopy
Type: BOOK - Published: 2001 - Publisher:

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Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films
Language: en
Pages: 176

Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In(x)Ga(1-x)N Thin Films

Authors: Peter Quinn Miraglia
Categories:
Type: BOOK - Published: 2001 - Publisher:

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