Oxide Nanoelectronics Volume 1292
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Oxide Nanoelectronics:
Author | : Harold Hwang |
Publisher | : Cambridge University Press |
Total Pages | : 170 |
Release | : 2014-06-05 |
Genre | : Technology & Engineering |
ISBN | : 9781107406841 |
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Symposium K, "Oxide Nanoelectronics," was held Nov. 29-Dec. 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The emerging field of oxide nanoelectronics has grown tremendously in the last decade. Many striking empirical observations in a variety of oxide materials show great promise for ultrahigh-density storage, passive and active nanodevice creation, and functionality based on multiple properties (e.g., magnetic and ferroelectric). The prospect for band-device engineering in oxide heterostructures is comparable to what took place for III-V semiconductors roughly 30 years ago. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems. The presented topics included: the growth of new oxide materials and heterostructures using pulsed-laser deposition and molecular beam epitaxy; integration of oxides with silicon substrates; characterization of novel electronic and correlated-electron properties in oxide thing films and superlattices; nanoscale control of phase transitions and correlated properties; theory of oxide nanostructures; mixed ion-electronic conduction; magnetism; and oxide 2DEGs.
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