Low Temperature Epitaxial Growth of III-Nitride Semiconductors on Silicon Carbide Templates by Remote Plasma Metal-organic Chemical Vapor Deposition
Language: en
Pages:
Authors: Robert Dubreuil
Categories:
Type: BOOK - Published: 2017 - Publisher:

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Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N
Low Temperature Epitaxial Growth of Semiconductors
Language: en
Pages: 356
Authors: Takashi Hariu
Categories: Technology & Engineering
Type: BOOK - Published: 1991 - Publisher: World Scientific

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Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in
Selective Epitaxial Growth of Silicon Carbide on Silicon by Low- Temperature Chemical Vapor Deposition
Language: en
Pages: 242
Epitaxial Growth of Layered Structures of Silicon Carbide and Aluminum Nitride by Metal-organic Chemical Vapor Deposition
Language: en
Pages: 302
Low Temperature Silicon Epitaxy by Remote, Plasma-enhanced Chemical Vapor Deposition
Language: en
Pages: 306
Authors: Scott Dwight Habermehl
Categories:
Type: BOOK - Published: 1994 - Publisher:

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