Ion Implantation, Annealing, Charact4rization and Device Development in Beta-silicon Carbide Single Crystalline Thin Films

Ion Implantation, Annealing, Charact4rization and Device Development in Beta-silicon Carbide Single Crystalline Thin Films
Author: Jaesok Ryu
Publisher:
Total Pages: 464
Release: 1986
Genre:
ISBN:


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Ion Implantation, Annealing, Charact4rization and Device Development in Beta-silicon Carbide Single Crystalline Thin Films
Language: en
Pages: 464
Ion Implantation, Annealing and Simple Device Fabrication in Monocrystalline Beta-silicon Carbide Thin Films
Language: en
Pages: 222
Authors: John Adam Edmond
Categories:
Type: BOOK - Published: 1987 - Publisher:

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Chemical Vapor Deposition, Characterization and Device Development of Monocrystalline Beta- and Alpha(6H)-silicon Carbide Thin Films
Language: en
Pages: 366
Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates
Language: en
Pages: 30
Authors: Joseph J. Comer
Categories: Epitaxy
Type: BOOK - Published: 1970 - Publisher:

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Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and r
The Influence of Annealing on Thin Films of Beta SiC
Language: en
Pages: 24
Authors: Irvin Berman
Categories: Annealing of crystals
Type: BOOK - Published: 1972 - Publisher:

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Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen red