Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
Author: Hongxiang Mo
Publisher:
Total Pages: 131
Release: 2003
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ISBN:
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Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.


Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
Language: en
Pages: 131

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

Authors: Hongxiang Mo
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.
Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS.
Language: en
Pages:

Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS.

Authors:
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Conventional source/drain junction and contact formation processes can not meet the stringent requirements of future nanoscale complimentary metal oxide silicon
Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys
Language: en
Pages: 154

Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys

Authors: Jing Liu
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Keywords: germanosilicide, silicide, silicon germanium, contact resistance, ultra-shallow junction, source drain, CMOS.
Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits
Language: en
Pages:

Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits

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Type: BOOK - Published: 2004 - Publisher:

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State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressiv
Dissertation Abstracts International
Language: en
Pages: 820

Dissertation Abstracts International

Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 2004 - Publisher:

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