Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 4 New Materials Processes And Equipment
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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Author | : P. J. Timans |
Publisher | : The Electrochemical Society |
Total Pages | : 488 |
Release | : 2008-05 |
Genre | : Gate array circuits |
ISBN | : 1566776260 |
Download Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment Book in PDF, Epub and Kindle
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
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