Wide Bandgap Semiconductor Materials and Devices 12

Wide Bandgap Semiconductor Materials and Devices 12
Author: J. A. Bardwell
Publisher: The Electrochemical Society
Total Pages: 222
Release: 2011-04
Genre: Technology & Engineering
ISBN: 1566778670


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This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.


Wide Bandgap Semiconductor Materials and Devices 12
Language: en
Pages: 222
Authors: J. A. Bardwell
Categories: Technology & Engineering
Type: BOOK - Published: 2011-04 - Publisher: The Electrochemical Society

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This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandg
Wide Bandgap Semiconductor Materials and Devices 12
Language: en
Pages: 210
Authors:
Categories: Electrochemistry
Type: BOOK - Published: 2011 - Publisher:

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Wide Bandgap Semiconductors for Power Electronics
Language: en
Pages: 743
Authors: Peter Wellmann
Categories: Technology & Engineering
Type: BOOK - Published: 2022-01-10 - Publisher: John Wiley & Sons

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Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Language: en
Pages: 325
Authors: Yue Hao
Categories: Computers
Type: BOOK - Published: 2016-11-03 - Publisher: CRC Press

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, wit
Wide Bandgap Semiconductor Materials and Devices 20
Language: en
Pages: 53
Authors: S. Jang
Categories: Science
Type: BOOK - Published: 2019-05-17 - Publisher: The Electrochemical Society

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This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held