The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Author | : Zhiqiang Li |
Publisher | : Springer |
Total Pages | : 71 |
Release | : 2016-03-24 |
Genre | : Technology & Engineering |
ISBN | : 3662496836 |
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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
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