The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates

The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian Westwood
Publisher:
Total Pages: 432
Release: 1990
Genre:
ISBN:


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The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Language: en
Pages: 432
Authors: David Ian Westwood
Categories:
Type: BOOK - Published: 1990 - Publisher:

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The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates
Language: en
Pages:
Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures
Language: en
Pages: 578
MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF STRAINED INDIUM GALLIUM ARSENSIDE/GALLIUM ARSENIDE HETEROSTRUCTURES (INDIUM GALLIUM ARSENIDE/GALLIUM ARSENIDE, ARSENIDE).
Language: en
Pages: 164
The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Language: en
Pages:
Authors: David Andrew Woolf
Categories:
Type: BOOK - Published: 1990 - Publisher:

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