Selective Epitaxial Growth of Silicon Carbide on Silicon and Silicon Carbide Substrates by Chemical Vapor Deposition

Selective Epitaxial Growth of Silicon Carbide on Silicon and Silicon Carbide Substrates by Chemical Vapor Deposition
Author: Brandy Kay Burkland
Publisher:
Total Pages: 166
Release: 2001
Genre:
ISBN:


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Selective Epitaxial Growth of Silicon Carbide on Silicon and Silicon Carbide Substrates by Chemical Vapor Deposition
Language: en
Pages: 166
Epitaxial Growth of Silicon Carbide on On-axis Silicon Carbide Substrates Using Methyltrichlorosilane Chemical Vapor Deposition
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4H-silicon carbide (4H-SiC) is a wide band gap semiconductor with outstanding capabilities for high temperature, high power, and high frequency electronic devic
Selective Epitaxial Growth of Silicon Carbide on Silicon by Low- Temperature Chemical Vapor Deposition
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Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C
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Fundamentals of Silicon Carbide Technology
Language: en
Pages: 565
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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a num