Proton Responses On Mos Metal Oxide Semiconductor Electronics Operating At Cryogenic Temperatures

This report presents proton radiation damage data demonstrating that Metal-Oxide-Semiconductor (MOS) electronics (P-Channel or N-Channel), operated under applied negative gate biases and irradiated by 10 MeV protons, will suffer greater radiation damage per dose at cryogenic temperatures than at room temperatures. This was true for both radiation hardened and nonradiation hardened MOS structures. However, the data also showed that this was not true for all MOS devices operating under positive gate biases. Nonradiation hardened MOS units operating under positive gate biases, suffered radiation damages that were approximately equal at both the cold and room temperatures. Final data showed if irradiated cold temperature MOS devices were allowed to heat to about -123 C or warmer, the radiation damage within the devices would anneal rapidly. Keywords: Cryogenic temperatures; Bulk silicon; Protons; Test methods; Radiation effects.