Proceedings Of The Nato Advanced Study Institute On Physics Of Submicron Semiconductor Devices Held In San Miniato Italy On July 10 23 1983 The Physics Of Submicron Semiconductor Devices Nato Asi Series B Physics Volume 180

Contents: Modelling of Sub-Micron Devices; Boltzmann Transport Equation; Transport and Material Considerations for Submicron Devices; Epitaxial Growth for Sub Micron Structures; Insulator/Semiconductor Interfaces; Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces; Deep Levels at Compound-Semiconductor Interfaces; Ensemble Monte Carlo Techniques; Noise and Diffusion in Submicron Structures; Superlattices; Submicron Lithography; Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension; Physics of Heterostructures and Heterostructure Devices; Correlation Effects in Short Time, Nonstationary Transport; Device-Device Interactions; Quantum Transport and the Wigner Function; Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices; The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices; Monte Carlo Simulation of Transport in Submicron Structures; Two Dimensional Electron Gas Fet; Hot Electron Transfer AMplifiers; New Graded Band Gap and Superlattice Structures and Their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices; Metal-Semiconductor Interfaces; Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser-Excited Electron-Hole Plasmas; and Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques. (JHD).