Plasma Deposited Silicon Nitride and Silicon Dioxide Insulators on InP for Metal-insulator-semiconductor Field Effect Transistors

Plasma Deposited Silicon Nitride and Silicon Dioxide Insulators on InP for Metal-insulator-semiconductor Field Effect Transistors
Author: Paul G. Young
Publisher:
Total Pages: 352
Release: 1988
Genre:
ISBN:


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Plasma Deposited Silicon Nitride and Silicon Dioxide Insulators on InP for Metal-insulator-semiconductor Field Effect Transistors
Language: en
Pages: 352
Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Language: en
Pages: 644
Authors: Vikram J. Kapoor
Categories: Science
Type: BOOK - Published: 1994 - Publisher: The Electrochemical Society

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Extended Abstracts
Language: en
Pages: 2446
Authors: Electrochemical Society
Categories: Electrochemistry
Type: BOOK - Published: 1987 - Publisher:

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Scientific and Technical Aerospace Reports
Language: en
Pages: 1278
Authors:
Categories: Aeronautics
Type: BOOK - Published: 1984 - Publisher:

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Physics and Chemistry of III-V Compound Semiconductor Interfaces
Language: en
Pages: 472
Authors: Carl Wilmsen
Categories: Science
Type: BOOK - Published: 2013-06-29 - Publisher: Springer Science & Business Media

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The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in p