Physics and Technology of High-k Gate Dielectrics 5

Physics and Technology of High-k Gate Dielectrics 5
Author: Samares Kar
Publisher: The Electrochemical Society
Total Pages: 676
Release: 2007
Genre: Dielectrics
ISBN: 1566775701


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This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.


Physics and Technology of High-k Gate Dielectrics 5
Language: en
Pages: 676
Authors: Samares Kar
Categories: Dielectrics
Type: BOOK - Published: 2007 - Publisher: The Electrochemical Society

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This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high diel
Physics and Technology of High-k Gate Dielectrics 4
Language: en
Pages: 565
Authors: Samares Kar
Categories: Dielectrics
Type: BOOK - Published: 2006 - Publisher: The Electrochemical Society

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This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high di
Physics and Technology of High-k Gate Dielectrics 6
Language: en
Pages: 550
Authors: S. Kar
Categories: Dielectrics
Type: BOOK - Published: 2008-10 - Publisher: The Electrochemical Society

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The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and
Physics and Technology of High-k Gate Dielectrics I
Language: en
Pages: 330
Authors: Samares Kar
Categories: Science
Type: BOOK - Published: 2003 - Publisher:

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High-k Gate Dielectrics for CMOS Technology
Language: en
Pages: 560
Authors: Gang He
Categories: Technology & Engineering
Type: BOOK - Published: 2012-08-10 - Publisher: John Wiley & Sons

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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summari