Numerical Simulation of Submicron Semiconductor Devices

Numerical Simulation of Submicron Semiconductor Devices
Author: Kazutaka Tomizawa
Publisher: Artech House on Demand
Total Pages: 341
Release: 1993-01-01
Genre: Mathematics
ISBN: 9780890066201
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Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.


Numerical Simulation of Submicron Semiconductor Devices
Language: en
Pages: 341

Numerical Simulation of Submicron Semiconductor Devices

Authors: Kazutaka Tomizawa
Categories: Mathematics
Type: BOOK - Published: 1993-01-01 - Publisher: Artech House on Demand

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Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world exampl
Numerical Simulation of Semiconductor Structures
Language: en
Pages: 198

Numerical Simulation of Semiconductor Structures

Authors: Abel Garcia-Barrientos
Categories:
Type: BOOK - Published: 2013-10-21 - Publisher:

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The investigation of new materials, devices and techniques to improve the performance of telecommunications, spectroscopy and radar systems applications, has ca
Simulation of Semiconductor Devices and Processes
Language: en
Pages: 525

Simulation of Semiconductor Devices and Processes

Authors: Siegfried Selberherr
Categories: Computers
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

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The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1
Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices
Language: en
Pages: 210

Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices

Authors: Edwin Chihchuan Kan
Categories:
Type: BOOK - Published: 1992 - Publisher:

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Numerical modeling of nonstationary transport effects using partial differential equations derived from the Boltzmann Transport Equation (BTE) is investigated.
Hierarchical Device Simulation
Language: en
Pages: 278

Hierarchical Device Simulation

Authors: Christoph Jungemann
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

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This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo