Multiscale Modeling Strategies For Chemical Vapor Deposition

(Cont.) In order to model selective epitaxy, the mask is represented as a hard wall boundary condition, and overgrowth on (111)A facets is included. With this model, we investigate the effects of the unknown parameters and the growth conditions on film morphology evolution. The observed trends are in agreement with the experimental data. Since KMC simulations are limited to small surfaces and short deposition times we propose algorithms for linking the KMC and mesoscale feature shape evolution models. Finally, the feasibility of linking the coupled KMC-mesoscale model and the reactor or reactor-feature scale models is assessed.