III-nitride Ultraviolet Emitters Produced by Molecular Beam Epitaxy

III-nitride Ultraviolet Emitters Produced by Molecular Beam Epitaxy
Author: Anirban Bhattacharyya
Publisher:
Total Pages: 269
Release: 2005
Genre: Gallium nitride
ISBN:


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III-nitride Ultraviolet Emitters Produced by Molecular Beam Epitaxy
Language: en
Pages: 269
Authors: Anirban Bhattacharyya
Categories: Gallium nitride
Type: BOOK - Published: 2005 - Publisher:

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III-Nitride Ultraviolet Emitters
Language: en
Pages: 454
Authors: Michael Kneissl
Categories: Technology & Engineering
Type: BOOK - Published: 2015-11-12 - Publisher: Springer

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This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substr
Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy
Language: en
Pages:
Authors: Michael William Moseley
Categories: Molecular beam epitaxy
Type: BOOK - Published: 2013 - Publisher:

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Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted
Molecular Beam Epitaxy
Language: en
Pages: 790
Authors: Mohamed Henini
Categories: Science
Type: BOOK - Published: 2018-06-27 - Publisher: Elsevier

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in
III-nitride
Language: en
Pages: 442
Authors: Zhe Chuan Feng
Categories: Mathematics
Type: BOOK - Published: 2006 - Publisher: World Scientific

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III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in