Hot Carrier Induced Instabilities In N Mosfets With Thermally Nitrided Oxide As Gate Dielectric

This dissertation, "Hot-carrier-induced Instabilities in N-mosfet's With Thermally Nitrided Oxide as Gate Dielectric" by 馬志堅, Zhi-jian, Ma, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123273 Subjects: Metal oxide semiconductor field-effect transistors Hot carriers Nitric oxide