Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys

Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys
Author: Jing Liu
Publisher:
Total Pages: 154
Release: 2003
Genre:
ISBN:
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Keywords: germanosilicide, silicide, silicon germanium, contact resistance, ultra-shallow junction, source drain, CMOS.


Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys
Language: en
Pages: 154

Germanosilicide Contacts to Ultra-shallow Pn Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-germanium Alloys

Authors: Jing Liu
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Keywords: germanosilicide, silicide, silicon germanium, contact resistance, ultra-shallow junction, source drain, CMOS.
Germanosilicide Contacts to Ultra-shallow PN Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys
Language: en
Pages:

Germanosilicide Contacts to Ultra-shallow PN Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys

Authors:
Categories:
Type: BOOK - Published: 2003 - Publisher:

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One of the key challenges for future CMOS technology nodes is to form source/drain junctions with very small parasitic series resistance values. This requires f
Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS.
Language: en
Pages:

Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS.

Authors:
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Conventional source/drain junction and contact formation processes can not meet the stringent requirements of future nanoscale complimentary metal oxide silicon
Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
Language: en
Pages: 131

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

Authors: Hongxiang Mo
Categories:
Type: BOOK - Published: 2003 - Publisher:

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Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Language: en
Pages: 115

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Authors: Guilei Wang
Categories: Technology & Engineering
Type: BOOK - Published: 2019-09-20 - Publisher: Springer Nature

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This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As