Gaas Based Metamorphic High Electron Mobility Transistors With High Indium Mole Fraction Quantum Well Channels
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Gaas-based Metamorphic High Electron Mobility Transistors with High Indium Mole Fraction Quantum Well Channels
Author | : Ming-Yih Kao |
Publisher | : |
Total Pages | : 146 |
Release | : 2004 |
Genre | : Electrical engineering |
ISBN | : |
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