Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
Author: Hongxiang Mo
Publisher:
Total Pages: 131
Release: 2003
Genre:
ISBN:


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Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.