Evaluation of Radiation Damage on MOS Devices in PECVD Silicon Nitride Using a Room Temperature, 60Hz Deposition Process

Evaluation of Radiation Damage on MOS Devices in PECVD Silicon Nitride Using a Room Temperature, 60Hz Deposition Process
Author: Gration Nshekanabo
Publisher:
Total Pages: 144
Release: 1996
Genre: Metal oxide semiconductors
ISBN:
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Evaluation of Radiation Damage on MOS Devices in PECVD Silicon Nitride Using a Room Temperature, 60Hz Deposition Process
Language: en
Pages: 144

Evaluation of Radiation Damage on MOS Devices in PECVD Silicon Nitride Using a Room Temperature, 60Hz Deposition Process

Authors: Gration Nshekanabo
Categories: Metal oxide semiconductors
Type: BOOK - Published: 1996 - Publisher:

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Ionizing Radiation Effects in MOS Devices and Circuits
Language: en
Pages: 616

Ionizing Radiation Effects in MOS Devices and Circuits

Authors: T. P. Ma
Categories: Technology & Engineering
Type: BOOK - Published: 1989-04-18 - Publisher: John Wiley & Sons

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The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits
Effects of Plasma-deposited Silicon Nitride Passivation on the Radiation Hardness of CMOS Integrated Circuits
Language: en
Pages:

Effects of Plasma-deposited Silicon Nitride Passivation on the Radiation Hardness of CMOS Integrated Circuits

Authors:
Categories:
Type: BOOK - Published: 1980 - Publisher:

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The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. Th
Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices
Language: en
Pages: 10

Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices

Authors: GEO-CENTERS INC NEWTON UPPER FALLS MA.
Categories:
Type: BOOK - Published: 1982 - Publisher:

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The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on
Proton Responses on MOS (Metal-Oxide-Semiconductor) Electronics Operating at Cryogenic Temperatures
Language: en
Pages: 34

Proton Responses on MOS (Metal-Oxide-Semiconductor) Electronics Operating at Cryogenic Temperatures

Authors: R. W. Tallon
Categories:
Type: BOOK - Published: 1990 - Publisher:

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This report presents proton radiation damage data demonstrating that Metal-Oxide-Semiconductor (MOS) electronics (P-Channel or N-Channel), operated under applie