Epitaxial Growth of III-Nitride Compounds

Epitaxial Growth of III-Nitride Compounds
Author: Takashi Matsuoka
Publisher: Springer
Total Pages: 228
Release: 2018-04-17
Genre: Technology & Engineering
ISBN: 3319766414


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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.


Epitaxial Growth of III-Nitride Compounds
Language: en
Pages: 228
Authors: Takashi Matsuoka
Categories: Technology & Engineering
Type: BOOK - Published: 2018-04-17 - Publisher: Springer

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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach th
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Type: BOOK - Published: 2002-11-15 - Publisher: CRC Press

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This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a compr
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Categories: Electronic apparatus and appliances
Type: BOOK - Published: 2019-10 - Publisher: Academic Press

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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applica
Hetero- and Homo-epitaxial Growth of III-nitride Based Junctions and Devices by Molecular Beam Epitaxy
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Optoelectronic Devices
Language: en
Pages: 602
Authors: M Razeghi
Categories: Science
Type: BOOK - Published: 2004 - Publisher: Elsevier

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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this