Epitaxial Growth Of 6h Silicon Carbide In The Temperature Range 1320 To 1390 C
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Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C
| Author | : Herbert A. Will |
| Publisher | : |
| Total Pages | : 20 |
| Release | : 1974 |
| Genre | : Crystal growth |
| ISBN | : |
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