Epitaxial Growth And Characterization Of Sil Xgex Materials And Devices

The current program of research was aimed at understanding the issues related to growth and doping of SiGe/Si heterostructures by gas-source MBE, studying the transport properties of the alloys, determining the fundamental material parameters and designing and demonstrating electronic and optoelectronic devices. The specific electronic device is the HBT with high Ge-containing base layers, and the optoelectronic devices are detectors, photoreceivers, and electro-optic modulators. The overall objective is to demonstrate, reliably and reproducibly, the feasibility of integrating SeGe-based optoelectronics with Si-based VLSI technology. We summarize below some of the highlights of the program related to work done in the last year. jg p.3.