Electron Spin Resonance And Radiation Effects In Mos Devices
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Electron Spin Resonance and Radiation Effects in MOS Devices
Author | : |
Publisher | : |
Total Pages | : 90 |
Release | : 1990 |
Genre | : |
ISBN | : |
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The basic mechanisms were explored of radiation damage in metal/ oxide/silicon (MOS) field effect transistors (MOSFET's) with a combination of electron spin resonance (ESR) and electrical measurements. The major focus has been develop a new and much more sensitive ESR technique called spin dependent recombination (SDR) to study radiation damage in MOSFET's. Keywords: Metal oxide semiconductors; Field effect transistors; Electron spin resonance; Radiation effects.
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