Analysis of the GaN-sapphire Thick Films, Processed by Iodine Vapor Phase Growth by Transmission Electron Microscopy and Atomic Force Microscopy

Analysis of the GaN-sapphire Thick Films, Processed by Iodine Vapor Phase Growth by Transmission Electron Microscopy and Atomic Force Microscopy
Author: Praveena M. Bhaskara
Publisher:
Total Pages: 186
Release: 2001
Genre: Atomic force microscopy
ISBN:


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Analysis of the GaN-sapphire Thick Films, Processed by Iodine Vapor Phase Growth by Transmission Electron Microscopy and Atomic Force Microscopy
Language: en
Pages: 186
Authors: Praveena M. Bhaskara
Categories: Atomic force microscopy
Type: BOOK - Published: 2001 - Publisher:

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Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth
Language: en
Pages:
Authors:
Categories:
Type: BOOK - Published: 2004 - Publisher:

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The research conducted for this dissertation involved two tasks important to the achievement of (1) increased breakdown fields and improved ohmic and rectifying
Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth
Language: en
Pages: 239
Authors: William John Mecouch
Categories:
Type: BOOK - Published: 2005 - Publisher:

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Keywords: IVPG, HVPE, bulk growth, Surface science.
International Aerospace Abstracts
Language: en
Pages: 940
Authors:
Categories: Aeronautics
Type: BOOK - Published: 1997 - Publisher:

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Electrical & Electronics Abstracts
Language: en
Pages: 1948
Authors:
Categories: Electrical engineering
Type: BOOK - Published: 1997 - Publisher:

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